Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs
نویسندگان
چکیده
منابع مشابه
InGaAs Quantum-Well MOSFETs for logic applications
InGaAs is a promising candidate as an n-type channel material for future CMOS due to its superior electron transport properties. Great progress has taken place recently in demonstrating InGaAs MOSFETs for this goal. Among possible InGaAs MOSFET architectures, the recessedgate design is an attractive option due to its scalability and simplicity. In this thesis, a novel selfaligned recessed-gate ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2015
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2015.2410292